I am fabricating Bottom gate Thin-film-Transistors.
The Gate is 60nm Molibdenum. The dielectric structure changes with the table below. The temperature represent the annealing temperature after having deposited the IGZO semiconductor.
sample Structure temperature 1 SiTa 300 2 SiTa 180 3 SiTaSi 300 4 SiTaSi 180 5 TaSi 300 6 TaSi 180
after heating the samples, I am getting these bubble-like formation on the gate structure.
what could be causing this issue? Prebake SiTa-300